• DocumentCode
    781509
  • Title

    High-gain GaInP/GaAs heterojunction phototransistor utilising guard-ring structure

  • Author

    Twynan, J.K. ; Claxton, P.A. ; Woods, R.C.

  • Author_Institution
    Sheffield Univ., UK
  • Volume
    25
  • Issue
    2
  • fYear
    1989
  • Firstpage
    85
  • Lastpage
    86
  • Abstract
    GaInP/GaAs heterojunction phototransistors with an emitter guard-ring contact are fabricated. The gain and speed of response of a device is significantly improved by the application of bias to the guard-ring, indicating that the recombination current is surface-dominated and that the quality of the GaInP/GaAs heterojunction interface is high.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; phototransistors; GaInP-GaAs; emitter guard-ring contact; gain; guard-ring structure; heterojunction phototransistor; recombination current; speed; surface-dominated;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890063
  • Filename
    14231
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=781509