Title :
A Simple Method for Assessing Power Devices Sensitivity to SEEs in Atmospheric Environment
Author :
Foro, L.L. ; Touboul, A.D. ; Wrobel, F. ; Saigne, F.
Author_Institution :
IES, Univ. Montpellier 2, Montpellier, France
Abstract :
Sensitive volume and critical energy are important fitting parameters for predicting the triggering of destructive events in power components. Based on both nuclear cross section and experimental data, we propose a method for estimating the sensitivity to the whole atmospheric spectrum of different IGBT technologies thanks to critical parameters extraction.
Keywords :
insulated gate bipolar transistors; power semiconductor devices; IGBT technologies; SEE; atmospheric environment; destructive events; parameters extraction; power components; power devices sensitivity; Alpha particles; Insulated gate bipolar transistors; Ions; Neutrons; Performance evaluation; Radiation effects; Sensitivity; Atmospheric neutrons; MC-ORACLE; critical energy; cross section; insulated gate bipolar transistor (IGBT); nuclear cross-section; sensitive volume;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2259639
