A 100 V/100 W monolithic power audio amplifier in mixed bipolar-MOS technology

Author

Brasca, G. ; Botti, E.

Author_Institution

SGC-Thomson Microelectron., Milan, Italy

Volume

38

Issue

3

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

217

Lastpage

222

Abstract

The monolithic power audio amplifier described was able to deliver up to 100-W sinusoidal output power into an 8-Ω load. The device, suitable for high-fidelity applications, was developed in a mixed bipolar-MOS high-voltage technology. This process allows the integration on the same chip of two or more power MOS devices, insulated from each other, together with low-level signal and high-voltage components. The final elements are two n-channel power double-diffused MOS (DMOS) transistors with extremely high current capability. The architecture of the structure, which is the result of the merging of the DMOS silicon-gate process and the standard junction isolation technique, is shown. The IC performance is discussed

Keywords

BIMOS integrated circuits; Hi-Fi equipment; audio-frequency amplifiers; power amplifiers; 100 V; 100 W; 8 ohm; DMOS silicon-gate process; double-diffused MOS; high-fidelity applications; high-voltage components; junction isolation technique; low level signal components; mixed bipolar-MOS high-voltage technology; monolithic power audio amplifier; n-channel power DMOS transistors; power MOS devices; sinusoidal output power; Breakdown voltage; Circuits; Consumer electronics; Costs; Electric breakdown; High power amplifiers; MOS devices; Power amplifiers; Semiconductor optical amplifiers; Transistors;

fLanguage

English

Journal_Title

Consumer Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0098-3063

Type

jour

DOI

10.1109/30.156687

Filename

156687