Title :
Transient High Energy Radiation Response in the Thin-Film Transistor
Author :
Emmert, R.R. ; Berggren, C.C. ; Peffley, W.M. ; Honnold, V.R.
Author_Institution :
Hughes Aircraft Company Hughes-Fullerton Fullerton, California
Abstract :
The transient response of the polycrystalline CdSe thin-film transistor (TFT) to pulsed ionizing radiation has been experimentally observed. The incremental drain current is characterized by a prompt response followed by a much slower decay, which has a time constant of the order of 100 microseconds. This slow portion of the device response has been shown to be due to trapping processes in the bulk semiconductor film. A model has been developed to explain this response.
Keywords :
Circuit testing; Electrodes; Insulation; Ionizing radiation; Pulse circuits; Semiconductor films; Semiconductor thin films; Substrates; Thin film transistors; Transient response;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1996.4324373
