Transient modeling of ferroelectric capacitors for nonvolatile memories

Author

Sheikholeslami, Ali ; Gulak, P. Glenn

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

Volume

43

Issue

3

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

450

Lastpage

456

Abstract

Present ferroelectric (FE) capacitor models mostly rely on continuous hysteresis loop characteristics of FE materials. Our experimental results show that this approach overestimates the remanent and saturation polarizations available for nonvolatile semiconductor memories by more than 50%. A behavioral transient model based on pulse measurement results is proposed and implemented as an HSPICE macro-model. The model mainly consists of two nonlinear capacitors, corresponding to the two different polarization states of an FE capacitor.

Keywords

SPICE; capacitors; dielectric hysteresis; dielectric polarisation; ferroelectric capacitors; ferroelectric storage; integrated memory circuits; modelling; random-access storage; transient analysis; HSPICE macro-model; behavioral transient model; capacitor models; ferroelectric capacitors; hysteresis loop characteristics; nonlinear capacitors; nonvolatile memories; nonvolatile semiconductor memories; pulse measurement results; remanent polarization; saturation polarization; transient modeling; Capacitors; Circuit simulation; Ferroelectric materials; Iron; Nonvolatile memory; Piecewise linear approximation; Piecewise linear techniques; Polarization; Voltage; Writing;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.489404

Filename

489404