Title :
High temperature characteristic T0 and low threshold current density of 1.3 μm InAsP/InGaP/InP compensated strain multiquantum well structure lasers
Author :
Ougazzaden, A. ; Mircea, A. ; Kazmierski, C.
Author_Institution :
Lab. de Bagneux, France Telecom, Bagneux, France
fDate :
5/11/1995 12:00:00 AM
Abstract :
A high device quality material consisting of 10 compensated strained quantum well InAsP/InGaP structures was grown by MOCVD at atmospheric pressure. The estimated threshold current density for an infinite cavity length was 130 A/cm2 per well. A high characteristic temperature of 117 K was obtained. To the authors´ knowledge, this is the highest value for as-cleaved lasers at 1.3 μm on InP substrates
Keywords :
III-V semiconductors; chemical vapour deposition; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; 1.3 micrometre; 117 K; InAsP-InGaP-InP; InP; MOCVD; as-cleaved lasers; atmospheric pressure; characteristic temperature; compensated strain multiquantum well structure lasers; high temperature characteristic; infinite cavity length; low threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950567
