• DocumentCode
    782702
  • Title

    All solid source molecular beam epitaxy growth of 1.35 μm wavelength strained-layer GaInAsP quantum well laser

  • Author

    Toivonen, M. ; Salokatve, A. ; Jalonen, M. ; Näppi, J. ; Asonen, H. ; Pessa, M. ; Murison, R.

  • Author_Institution
    Dept. of Phys., Tampere Univ. of Technol., Finland
  • Volume
    31
  • Issue
    10
  • fYear
    1995
  • fDate
    5/11/1995 12:00:00 AM
  • Firstpage
    797
  • Lastpage
    799
  • Abstract
    The first GaInAsP based laser diode grown by all solid source molecular beam epitaxy is reported. A strained-layer GaInAsP/InP separate confinement heterostructure multiquantum well laser emitting at 1.35 μm was prepared. A low threshold current density of 510 A/cm2 was obtained for a broad-area laser having a cavity length of 1300 μm
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; 1.35 micrometre; 1300 micron; GaInAsP; all solid source MBE; broad-area laser; cavity length; molecular beam epitaxy growth; separate confinement heterostructure multiquantum well laser; strained-layer quantum well laser; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950526
  • Filename
    386938
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=782702