• DocumentCode
    782901
  • Title

    Reliability comparison of short-channel MOSFETs with cobalt salicide and titanium salicide structures

  • Author

    Jung, K.H. ; Kwong, D.L. ; Boeck, B.

  • Author_Institution
    Texas Univ., Austin, TX, USA
  • Volume
    25
  • Issue
    2
  • fYear
    1989
  • Firstpage
    96
  • Lastpage
    98
  • Abstract
    Short-channel LDD MOSFETs are fabricated by a CoSi2 salicide process with and without ion beam mixing, and a TiSi2 salicide process with ion beam mixing. The results of hot carrier stress measurements indicate the superior reliability of CoSi2 MOSFETs fabricated with ion beam mixing.
  • Keywords
    cobalt compounds; insulated gate field effect transistors; metallisation; reliability; titanium compounds; CoSi 2; LDD MOSFETs; TiSi 2; hot carrier stress measurements; ion beam mixing; reliability; salicide process; self-aligned silicide; short-channel;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890071
  • Filename
    14239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=782901