Title :
Reliability comparison of short-channel MOSFETs with cobalt salicide and titanium salicide structures
Author :
Jung, K.H. ; Kwong, D.L. ; Boeck, B.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
Short-channel LDD MOSFETs are fabricated by a CoSi2 salicide process with and without ion beam mixing, and a TiSi2 salicide process with ion beam mixing. The results of hot carrier stress measurements indicate the superior reliability of CoSi2 MOSFETs fabricated with ion beam mixing.
Keywords :
cobalt compounds; insulated gate field effect transistors; metallisation; reliability; titanium compounds; CoSi 2; LDD MOSFETs; TiSi 2; hot carrier stress measurements; ion beam mixing; reliability; salicide process; self-aligned silicide; short-channel;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890071
