DocumentCode :
783133
Title :
Internal Q-switching in semiconductor lasers: high intensity pulses of the picosecond range and the spectral peculiarities
Author :
Vainshtein, Sergey ; Rossin, Victor V. ; Kilpelä, Ari ; Kostamovaara, Juha ; Myllylä, Risto ; Määttä, Kari
Author_Institution :
A.F. Ioffe Inst., Acad. of Sci., St. Petersburg, Russia
Volume :
31
Issue :
6
fYear :
1995
fDate :
6/1/1995 12:00:00 AM
Firstpage :
1015
Lastpage :
1021
Abstract :
Optical pulses of ~100 ps duration, and ~102 W power were obtained from the industrial single heterostructure lasers with a standard pulse generation power of ~10 W in the internal Q-switching mode. Temporal and spectral analyses allow three components to be distinguished in the laser optical pulses: ordinary delayed pulses of large duration at energies considerably lower than the energy gap, short optical pulses caused by the gain-switching effect at higher energies, and short optical pulses at the end of the current pulse (Q-switching mode) at the highest energies. A model is proposed involving band tail states as a saturable absorber causing large delays
Keywords :
Q-switching; semiconductor lasers; 100 ps; 1E2 W; band tail states; current pulse; delayed pulses; gain-switching; high intensity pulses; industrial single heterostructure lasers; internal Q-switching; optical pulses; picosecond range; saturable absorber; semiconductor lasers; spectral analysis; temporal analysis; Absorption; Delay effects; Impurities; Laser modes; Optical pulse generation; Optical pulses; Power lasers; Semiconductor lasers; Tail; Thermal conductivity;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.387037
Filename :
387037
Link To Document :
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