• DocumentCode
    783133
  • Title

    Internal Q-switching in semiconductor lasers: high intensity pulses of the picosecond range and the spectral peculiarities

  • Author

    Vainshtein, Sergey ; Rossin, Victor V. ; Kilpelä, Ari ; Kostamovaara, Juha ; Myllylä, Risto ; Määttä, Kari

  • Author_Institution
    A.F. Ioffe Inst., Acad. of Sci., St. Petersburg, Russia
  • Volume
    31
  • Issue
    6
  • fYear
    1995
  • fDate
    6/1/1995 12:00:00 AM
  • Firstpage
    1015
  • Lastpage
    1021
  • Abstract
    Optical pulses of ~100 ps duration, and ~102 W power were obtained from the industrial single heterostructure lasers with a standard pulse generation power of ~10 W in the internal Q-switching mode. Temporal and spectral analyses allow three components to be distinguished in the laser optical pulses: ordinary delayed pulses of large duration at energies considerably lower than the energy gap, short optical pulses caused by the gain-switching effect at higher energies, and short optical pulses at the end of the current pulse (Q-switching mode) at the highest energies. A model is proposed involving band tail states as a saturable absorber causing large delays
  • Keywords
    Q-switching; semiconductor lasers; 100 ps; 1E2 W; band tail states; current pulse; delayed pulses; gain-switching; high intensity pulses; industrial single heterostructure lasers; internal Q-switching; optical pulses; picosecond range; saturable absorber; semiconductor lasers; spectral analysis; temporal analysis; Absorption; Delay effects; Impurities; Laser modes; Optical pulse generation; Optical pulses; Power lasers; Semiconductor lasers; Tail; Thermal conductivity;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.387037
  • Filename
    387037