• DocumentCode
    783225
  • Title

    Performance of GaN Schottky contact MITATT diode at terahertz frequency

  • Author

    Wu, T.

  • Author_Institution
    State Key Lab. of Millimeterwaves, Southeast Univ., Nanjing
  • Volume
    44
  • Issue
    14
  • fYear
    2008
  • Firstpage
    883
  • Lastpage
    884
  • Abstract
    A novel wurtzite gallium nitride mixed tunnelling and avalanche transit time (MITATT) diode is demonstrated. Schottky contact is used in these MITATT diodes to reduce the contact resistance. The performance of such MITATT diodes is evaluated using an accurate large-signal model. Results indicate that the new type MITATT diode can operate at 0.88 THz. Output power density is more than 1.11 MW/cm2 from 0.29 to 0.88 THz. Efficiency of about 18 is found at 0.88 THz.
  • Keywords
    III-V semiconductors; IMPATT diodes; Schottky barriers; Schottky diodes; contact resistance; gallium compounds; submillimetre wave diodes; wide band gap semiconductors; GaN; Schottky contact MITATT diode; contact resistance; large-signal model; mixed tunnelling and avalanche transit time diode; output power density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20080568
  • Filename
    4558466
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=783225