Performance of GaN Schottky contact MITATT diode at terahertz frequency

A novel wurtzite gallium nitride mixed tunnelling and avalanche transit time (MITATT) diode is demonstrated. Schottky contact is used in these MITATT diodes to reduce the contact resistance. The performance of such MITATT diodes is evaluated using an accurate large-signal model. Results indicate that the new type MITATT diode can operate at 0.88 THz. Output power density is more than 1.11 MW/cm² from 0.29 to 0.88 THz. Efficiency of about 18 is found at 0.88 THz.