High-stability 72-GHz Gunn oscillator for the characterization of ultra-high-speed optical receivers based on InP and InSb Schottky diodes

Author

Galzerano, Gianluca ; Svelto, Cesare ; Bava, Elio ; Carelli, G. ; Finotti, M. ; Moretti, A. ; Beverini, N.

Author_Institution

Dipt. di Fisica, Politecnico di Milano, Italy

Volume

52

Issue

4

fYear

2003

Firstpage

1190

Lastpage

1194

Abstract

A high-stability and excellent spectral purity 72-GHz Gunn oscillator was realized to characterize ultra-wide-band Schottky diodes based on intrinsic InP and InSb semiconductors. The developed microwave oscillator shows a relative frequency stability of 2×10^-9 for observation times of 1 s and a collapse frequency of 4 THz. Preliminary frequency measurements of different emission lines of a far infrared laser demonstrate good detection efficiency with a typical bandwidth of 1 THz for these novel optical receivers.

Keywords

Gunn oscillators; III-V semiconductors; Schottky diodes; frequency measurement; frequency stability; indium compounds; optical receivers; 1 THz; 4 THz; 72 GHz; Gunn oscillator; III-V semiconductor; InP; InSb; Schottky diode; collapse frequency; far infrared laser detection; frequency measurement; frequency stability; microwave oscillator; optical receiver; spectral purity; Frequency measurement; Gunn devices; Indium phosphide; Infrared detectors; Microwave oscillators; Optical receivers; Schottky diodes; Semiconductor lasers; Stability; Ultra wideband technology;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/TIM.2003.815998

Filename

1232366