• DocumentCode
    783462
  • Title

    Silicone Elastomer Vulcanized by the Hydrosilation Reaction and its Influence on Properties of a Modified Mos Device

  • Author

    Yokoyama, T. ; Kinjo, N. ; Wakashima, Y.

  • Author_Institution
    Hitachi Research Laboratory, Ibaraki-ken, Japan
  • Issue
    3
  • fYear
    1985
  • fDate
    6/1/1985 12:00:00 AM
  • Firstpage
    549
  • Lastpage
    555
  • Abstract
    A p-MOS device in which the gate position is incompletely covered by the gate electrode has been used as a test device to estimate influence of silicone elastomer on residual current after gate operation. The elastomer was vulcanized by the hydrosilation reaction. It was found that the residual current could be represented as a function of the hardness and electrical conductivity of the silicone elastomer; that is, the current increased with decreasing hardness and increasing conductivity over the temperature range from 100 to 150°C. Comparison of activation energies measured by the residual current and by electrical conductivity indicated that different mechanisms of charge transport may be in operation, The differences may be due to the presence of dipole moments such as from unreacted hydrosilyl groups and of certain species such as water and chloride ions.
  • Keywords
    Conducting materials; Conductivity; Electrodes; MOS devices; MOSFET circuits; Polymers; Resins; Rubber; Semiconductor devices; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9367
  • Type

    jour

  • DOI
    10.1109/TEI.1985.348781
  • Filename
    4156815