Title :
Silicone Elastomer Vulcanized by the Hydrosilation Reaction and its Influence on Properties of a Modified Mos Device
Author :
Yokoyama, T. ; Kinjo, N. ; Wakashima, Y.
Author_Institution :
Hitachi Research Laboratory, Ibaraki-ken, Japan
fDate :
6/1/1985 12:00:00 AM
Abstract :
A p-MOS device in which the gate position is incompletely covered by the gate electrode has been used as a test device to estimate influence of silicone elastomer on residual current after gate operation. The elastomer was vulcanized by the hydrosilation reaction. It was found that the residual current could be represented as a function of the hardness and electrical conductivity of the silicone elastomer; that is, the current increased with decreasing hardness and increasing conductivity over the temperature range from 100 to 150°C. Comparison of activation energies measured by the residual current and by electrical conductivity indicated that different mechanisms of charge transport may be in operation, The differences may be due to the presence of dipole moments such as from unreacted hydrosilyl groups and of certain species such as water and chloride ions.
Keywords :
Conducting materials; Conductivity; Electrodes; MOS devices; MOSFET circuits; Polymers; Resins; Rubber; Semiconductor devices; Semiconductor materials;
Journal_Title :
Electrical Insulation, IEEE Transactions on
DOI :
10.1109/TEI.1985.348781