Title :
Low-voltage InGaAs/InP multiple-quantum-well reflective Fabry-Perot modulators for optical communications at microwave frequencies
Author :
Kirkby, C.J.G. ; Goodwin, M.J. ; Moseley, A.J. ; Robbins, D.J. ; Kearley, M.Q. ; Thompson, J.
Author_Institution :
GEC-Marconi Materials Technology Ltd., Towcester, UK
Abstract :
Efficient modulation at frequencies in excess of 1.3 GHz has been achieved in long-wavelength InGaAs/InP multiple-quantum-well reflective modulators. The devices function simultaneously as efficient high-speed detectors, with demonstrated response to 2 Gbit/s.<>
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; optical communication equipment; optical modulation; 1.3 GHz; 2 Gbit/s; InGaAs-InP; MQW; high-speed detectors; long-wavelength; low voltage; microwave frequencies; modulation; multiple-quantum-well reflective Fabry-Perot modulators; optical communications; photodetector; response; semiconductors; Electrooptic devices; Gallium compounds; Indium compounds; Optical communication equipment; Optical modulation;
Journal_Title :
Optoelectronics, IEE Proceedings J
