DocumentCode :
783640
Title :
Photon counting with silicon avalanche photodiodes
Author :
Sun, Xiaoli ; Davidson, Frederic M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
Volume :
10
Issue :
8
fYear :
1992
fDate :
8/1/1992 12:00:00 AM
Firstpage :
1023
Lastpage :
1032
Abstract :
Avalanche photodiodes (APDs) are studied for use as photon-counting detectors. The APD may be biased slightly above (Geiger mode) or slightly below its voltage breakdown point. In the latter case, if the photon absorption rate is low enough, each individual photoelectron current pulse may be resolved with the use of a discriminator. APDs used in this photon-counting mode are shown to give the best performance at low light levels. Experimentally, overall photon detection probabilities of 5.0 and 0.33% were obtained at λ=820 nm and λ=1.064 μm, respectively, with a photon counter dead time as low as 15 ns and a dark current counting rate of 7000/s. The APD photon counter exhibited an exponential photon interarrival time probability density and a near-Poissonian photon-counting probability
Keywords :
avalanche photodiodes; elemental semiconductors; photodetectors; photon counting; silicon; 1.064 micron; 820 nm; Si; avalanche photodiodes; dark current counting rate; dead time; discriminator; exponential photon interarrival time probability density; low light levels; overall photon detection probabilities; photoelectron current pulse; photon absorption rate; photon-counting detectors; voltage breakdown point; Absorption; Avalanche breakdown; Avalanche photodiodes; Counting circuits; Detectors; Diode lasers; Photoconductivity; Power lasers; Pulse amplifiers; Silicon;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.156841
Filename :
156841
Link To Document :
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