Title :
Enhanced Charge Collection by Single Ion Strike in AlGaN/GaN HEMTs
Author :
Onoda, S. ; Hasuike, A. ; Nabeshima, Yuji ; Sasaki, Hiromu ; Yajima, K. ; Sato, Shin-ichiro ; Ohshima, T.
Author_Institution :
Japan Atomic Energy Agency (JAEA), Takasaki, Japan
Abstract :
Transient currents in AlGaN/GaN High Electron Mobility Transistors (HEMTs) induced by focused ion beams are measured. Enhanced charge collection occurs in the on- and pinch-off states of AlGaN/GaN HEMTs. The first-order mechanism of enhancement is associated with bipolar and back-channel effects. In addition, we suggest that the temporal positive charge buildup contributes to the enhanced charge collection. The effect of displacement damage on the enhanced charge collection is also discussed.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; focused ion beam technology; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; HEMT; back-channel effect; bipolar effect; enhanced charge collection; first-order mechanism; focused ion beam; high electron mobility transistor; single ion strike; temporal positive charge buildup; transient current; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Radiation effects; Transient analysis; AlGaN/GaN high electron mobility transistor (HEMT); enhanced charge collection; single event effect (SEE);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2289373
