Enhanced Charge Collection by Single Ion Strike in AlGaN/GaN HEMTs

Author

Onoda, S. ; Hasuike, A. ; Nabeshima, Yuji ; Sasaki, Hiromu ; Yajima, K. ; Sato, Shin-ichiro ; Ohshima, T.

Author_Institution

Japan Atomic Energy Agency (JAEA), Takasaki, Japan

Volume

60

Issue

6

fYear

2013

fDate

Dec. 2013

Firstpage

4446

Lastpage

4450

Abstract

Transient currents in AlGaN/GaN High Electron Mobility Transistors (HEMTs) induced by focused ion beams are measured. Enhanced charge collection occurs in the on- and pinch-off states of AlGaN/GaN HEMTs. The first-order mechanism of enhancement is associated with bipolar and back-channel effects. In addition, we suggest that the temporal positive charge buildup contributes to the enhanced charge collection. The effect of displacement damage on the enhanced charge collection is also discussed.

Keywords

III-V semiconductors; aluminium compounds; bipolar transistors; focused ion beam technology; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; HEMT; back-channel effect; bipolar effect; enhanced charge collection; first-order mechanism; focused ion beam; high electron mobility transistor; single ion strike; temporal positive charge buildup; transient current; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Radiation effects; Transient analysis; AlGaN/GaN high electron mobility transistor (HEMT); enhanced charge collection; single event effect (SEE);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2289373

Filename

6678328