Accurate simulation of multifrequency semiconductor laser dynamics under gigabits-per-second modulation

A multifrequency laser diode model which contains Langevin operators is used, in conjunction with models for the pattern generator and optical detector, to illustrate how the averaged response and stochastic response of the laser diode to gigabits-per-second modulation can be simulated accurately. Large-signal, stochastic noise models which retain both the magnitude and phase information are described. This allows the simulated results to be displayed in the form of eye diagrams. Experimental and simulated results for the laser´s response to 1.5 Gb/s modulation, over the bias range from 4 mA above threshold to 8 mA below threshold, are presented. Good quantitative agreement was obtained between theory and experiment for all major characteristics of the laser´s response over the full bias range investigated. No adjustments to the original set of extracted model parameters were necessary in order to maintain good correlation for the different operating conditions