DocumentCode
783897
Title
Surface Ionization Ion Sources
Author
Wilson, R.G.
Author_Institution
Hughes Research Laboratories Malibu, California
Volume
14
Issue
3
fYear
1967
fDate
6/1/1967 12:00:00 AM
Firstpage
72
Lastpage
74
Abstract
Recent achievements with iridium surface ionization ion sources are discussed. These sources can be used to produce ion beams of elements with ionization potentials from 5-1/2 to 6 V, e. g., the IILA metals (Al, Ga, In and Tl), the rare earths, the heavier alkaline earths, and Li, in addition to the usual heavier alkalis. Ion beams of Li, Al, Ga, and In have been produced here. Ionization efficiencies, critical temperatures, current densities, and beam purities as measured by magnetic mass separation are discussed. An ion source design being employed for the IIIA metals is described briefly.
Keywords
Current density; Electrons; Gold; Ion beams; Ion implantation; Ion sources; Ionization; Particle separators; Semiconductor device doping; Temperature;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1967.4324525
Filename
4324525
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