• DocumentCode
    783897
  • Title

    Surface Ionization Ion Sources

  • Author

    Wilson, R.G.

  • Author_Institution
    Hughes Research Laboratories Malibu, California
  • Volume
    14
  • Issue
    3
  • fYear
    1967
  • fDate
    6/1/1967 12:00:00 AM
  • Firstpage
    72
  • Lastpage
    74
  • Abstract
    Recent achievements with iridium surface ionization ion sources are discussed. These sources can be used to produce ion beams of elements with ionization potentials from 5-1/2 to 6 V, e. g., the IILA metals (Al, Ga, In and Tl), the rare earths, the heavier alkaline earths, and Li, in addition to the usual heavier alkalis. Ion beams of Li, Al, Ga, and In have been produced here. Ionization efficiencies, critical temperatures, current densities, and beam purities as measured by magnetic mass separation are discussed. An ion source design being employed for the IIIA metals is described briefly.
  • Keywords
    Current density; Electrons; Gold; Ion beams; Ion implantation; Ion sources; Ionization; Particle separators; Semiconductor device doping; Temperature;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1967.4324525
  • Filename
    4324525