2D numerical investigation of the impact of compositional grading on the performance of submicrometer Si-SiGe MOSFET´s

Author

Voinigescu, S.P. ; Rabkin, P.B. ; Salama, C.A.T. ; Blakey, P.A.

Author_Institution

Microelectron. Center, Northern Telecom Ltd., Nepean, Ont., Canada

Volume

42

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

1039

Lastpage

1046

Abstract

Computer simulation is used to establish the impact of design parameters on the subthreshold characteristics, hot carrier injection, and high frequency performance of Si-SiGe FET´s. The results indicate that by fully grading the Ge content in the channel of a MOSFET, short channel effects are reduced and high frequency performance is improved as compared to devices with uniform Ge channels. A cutoff frequency of 38 GHz and a maximum frequency of oscillation of 160 GHz are predicted for fully graded p-channel MOSFET´s with 0.25 μm gate lengths. Energy balance simulation reveals that hot carrier injection at the Si-SiO₂ interface is considerably suppressed if a fully graded channel is employed

Keywords

Ge-Si alloys; MOSFET; carrier mobility; elemental semiconductors; hot carriers; microwave field effect transistors; semiconductor device models; semiconductor materials; silicon; simulation; 0.25 micron; 160 GHz; 2D numerical investigation; 38 GHz; Ge channel content; SiO₂-Si-SiGe; compositional grading; computer simulation; design parameters; energy balance simulation; high frequency performance; hot carrier injection; p-channel MOSFET; short channel effects reduction; submicrometer MOSFET; submicron device; subthreshold characteristics; Charge carrier processes; Cutoff frequency; FETs; Germanium silicon alloys; HEMTs; Hot carrier injection; MODFETs; MOSFET circuits; Silicon germanium; Telecommunications;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.387235

Filename

387235