Title :
Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit
Author :
Spiegel, Solon J. ; Ritter, Dan ; Hamm, R.A. ; Feygenson, A. ; Smith, P.R.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
fDate :
6/1/1995 12:00:00 AM
Abstract :
An extraction technique for determining the small-signal equivalent circuit model of an InP/GaInAs heterojunction bipolar transistor is presented. The equivalent circuit includes the extrinsic base collector capacitance and extrinsic base resistance. It is clearly indicated which elements are uniquely determined, and which elements are estimated
Keywords :
III-V semiconductors; S-parameters; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; HBT; InP-GaInAs; extraction technique; extrinsic base collector capacitance; extrinsic base resistance; heterojunction bipolar transistor; small-signal equivalent circuit; Bipolar transistors; Capacitance; Circuit testing; Delay effects; Equivalent circuits; Frequency; Heterojunction bipolar transistors; Indium phosphide; Parameter extraction; Scattering parameters;
Journal_Title :
Electron Devices, IEEE Transactions on
