2DEG base hot electron transistors fabricated using MBE and in situ ion beam lithography

Author

Ingram, S.G. ; Linfield, E.H. ; Brown, K.M. ; Jones, G.A.C. ; Ritchie, D.A. ; Kelly, M.J.

Author_Institution

Hirst Res. Centre, GEC Marconi Ltd., Borehamwood, UK

Volume

42

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

1065

Lastpage

1069

Abstract

A vertical hot electron transistor incorporating a two-dimensional electron gas (2DEG) base has been fabricated in the GaAs-AlGaAs materials system. The difficulties caused by the need to form selective ohmic contacts to the different conducting layers have been overcome using a combination of in situ focused ion beam (FIB) isolation and molecular beam epitaxial (MBE) regrowth. This has allowed a high yield of working devices to be achieved with a typical common emitter current gain of h_FE=6 at low temperatures

Keywords

III-V semiconductors; aluminium compounds; focused ion beam technology; gallium arsenide; hot electron transistors; ion beam lithography; isolation technology; microwave transistors; molecular beam epitaxial growth; semiconductor growth; two-dimensional electron gas; 2DEG base HET; FIB isolation; GaAs-AlGaAs; MBE; focused ion beam; hot electron transistors; insitu ion beam lithography; molecular beam epitaxial regrowth; selective ohmic contacts; two-dimensional electron gas; vertical HET; Charge carrier processes; Electron beams; Electron emission; Gallium arsenide; Ion beams; Iron; Lithography; Molecular beam epitaxial growth; Optical scattering; Particle scattering;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.387238

Filename

387238