DocumentCode :
784281
Title :
Analysis of the Bipolar Current Mirror Including Electrothermal and Avalanche Effects
Author :
Rinaldi, Niccolò ; D´Alessandro, Vincenzo ; Nanver, Lis K.
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Univ. of Naples Federico II, Naples
Volume :
56
Issue :
6
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
1309
Lastpage :
1321
Abstract :
An experimental and numerical study of the bipolar current mirror characteristics under strong self-heating and avalanche conditions is presented, and a theoretical model to describe the observed behavior is proposed. It is shown that both electrothermal effects and impact ionization may lead to a marked degradation of the mirroring action, eventually resulting in an instability phenomenon which limits the usable operating range of the circuit. Both the separate and combined actions of these positive-feedback mechanisms are investigated. The model compares favorably with experimental data measured on silicon-on-glass and GaAs current mirrors and allows deriving a theoretical relation for the critical condition corresponding to the onset of the instability. The impact of the most significant technology and design parameters is discussed, and design criteria are given in order to ensure an unconditionally stable behavior.
Keywords :
III-V semiconductors; avalanche breakdown; bipolar transistors; current mirrors; feedback; gallium arsenide; impact ionisation; silicon; thermal stability; GaAs; Si; bipolar current mirror characteristics; bipolar junction transistor; breakdown voltage; electrothermal-avalanche effect; impact ionization; mirror ratio degradation; positive-feedback mechanism; self-heating method; thermal instability phenomenon; Bandwidth; Circuits; Current measurement; Degradation; Electrothermal effects; Gallium arsenide; Heterojunction bipolar transistors; Impact ionization; Mirrors; Thermal resistance; Bipolar junction transistor (BJT); breakdown voltage; current mirror; electrothermal simulation; heterojunction bipolar transistor (HBT); impact ionization; thermal instability; thermal resistance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2018171
Filename :
4895298
Link To Document :
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