Subthreshold characteristics of fully depleted submicrometer SOI MOSFET´s

Author

Hsiao, Tommy C. ; Woo, Jason C S

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

42

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

1120

Lastpage

1125

Abstract

In this paper, an analytic current-voltage model in the subthreshold regime for submicrometer fully depleted (FD) silicon-on-insulator (SOI) MOSFET´s is presented. This model takes into account the dependence of the effective depleted charge on the drain bias and the voltage drop in the substrate region underneath the buried oxide. In addition to predicting accurate subthreshold current-voltage characteristics and subthreshold slope, this model can be used to predict important Short Channel Effects (SCE) such as the threshold voltage roll-off and Drain-Induced Barrier Lowering (DIBL). This model is verified by comparison to a two-dimensional device simulator, MEDICI. Good agreement is obtained for SOI channel lengths down to 0.25 μm

Keywords

MOSFET; semiconductor device models; silicon-on-insulator; 0.25 micron; SOI channel lengths; Si; current-voltage model; drain bias; drain-induced barrier lowering; effective depleted charge; fully depleted SOI MOSFET; short channel effects; submicron SOI MOSFET; subthreshold I-V characteristics; subthreshold characteristics; subthreshold regime; subthreshold slope; threshold voltage rolloff; voltage drop; Back; Doping; MOSFET circuits; Medical simulation; Semiconductor device modeling; Semiconductor films; Silicon on insulator technology; Substrates; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.387246

Filename

387246