DocumentCode
784407
Title
Modeling of CrSi2-Si and MoSi2-Si Schottky barrier contacts
Author
Donoval, D. ; Snowden, C.M. ; Nagl, V. ; Racko, J. ; Barus, M.
Author_Institution
Dept. of Microelectron., Slovak Tech. Univ., Bratislava, Slovakia
Volume
42
Issue
6
fYear
1995
fDate
6/1/1995 12:00:00 AM
Firstpage
1187
Lastpage
1189
Abstract
Forward and reverse l-V characteristics measured on CrSi2 -Si and MoSi2Si Schottky structures were compared with simulated ones. While the CrSi2-Si shows the typical non-ideal I-V characteristics of a reverse biased Schottky contact, the MoSi2-Si exhibit the nearly ideal forward and reverse I-V characteristics. The model for numerical simulation involves the clearly defined boundary conditions which combines the thermionic-emission/diffusion theory with the generation recombination theory and has the closed form
Keywords
Schottky barriers; Schottky diodes; chromium compounds; electron-hole recombination; elemental semiconductors; molybdenum compounds; semiconductor device models; semiconductor-metal boundaries; silicon; CrSi2-Si; MoSi2-Si; Schottky barrier contacts; clearly defined boundary conditions; forward l-V characteristics; generation recombination theory; nonideal I-V characteristics; numerical simulation; reverse l-V characteristics; thermionic-emission/diffusion theory; Boundary conditions; Breakdown voltage; Character generation; Charge carrier processes; Effective mass; Electrostatic analysis; Quantum mechanics; Radiative recombination; Schottky barriers; Tunneling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.387256
Filename
387256
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