Title :
Effects of gate recess etching on source resistance
Author :
Cibuzar, Gregory T.
Author_Institution :
Microelectron. Lab., Minnesota Univ., Minneapolis, MN, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
Recessed gate microwave MESFET´s and MODFET´s have a recessed but unmetallized length Lδ of the channel adjacent to the gate, whose resistance Rδ can significantly contribute to the source resistance Rs. The ratio Rδ/R s can be determined using common test structures
Keywords :
Schottky gate field effect transistors; etching; high electron mobility transistors; microwave field effect transistors; semiconductor device testing; common test structures; gate recess etching; microwave MESFETs; microwave MODFETs; recessed gate FETs; source resistance; unmetallized channel length; Contact resistance; Electrical resistance measurement; Etching; FETs; Implants; MESFETs; Metallization; Ohmic contacts; Surface resistance; Testing;
Journal_Title :
Electron Devices, IEEE Transactions on
