• DocumentCode
    784441
  • Title

    Effects of gate recess etching on source resistance

  • Author

    Cibuzar, Gregory T.

  • Author_Institution
    Microelectron. Lab., Minnesota Univ., Minneapolis, MN, USA
  • Volume
    42
  • Issue
    6
  • fYear
    1995
  • fDate
    6/1/1995 12:00:00 AM
  • Firstpage
    1195
  • Lastpage
    1196
  • Abstract
    Recessed gate microwave MESFET´s and MODFET´s have a recessed but unmetallized length Lδ of the channel adjacent to the gate, whose resistance Rδ can significantly contribute to the source resistance Rs. The ratio Rδ/R s can be determined using common test structures
  • Keywords
    Schottky gate field effect transistors; etching; high electron mobility transistors; microwave field effect transistors; semiconductor device testing; common test structures; gate recess etching; microwave MESFETs; microwave MODFETs; recessed gate FETs; source resistance; unmetallized channel length; Contact resistance; Electrical resistance measurement; Etching; FETs; Implants; MESFETs; Metallization; Ohmic contacts; Surface resistance; Testing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.387259
  • Filename
    387259
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=784441