Room-temperature operation of patterned quantum-dot lasers fabricated by electron beam lithography and selective area metal-organic chemical vapor deposition

Author

Elarde, V.C. ; Rangarajan, R. ; Borchardt, J.J. ; Coleman, J.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana-Champaign, IL, USA

Volume

17

Issue

5

fYear

2005

fDate

5/1/2005 12:00:00 AM

Firstpage

935

Lastpage

937

Abstract

We have developed a quantum-dot fabrication process which allows for explicit definition of the location and lateral dimension of quantum dots using electron beam lithography and selective area metal-organic chemical vapor deposition. We have demonstrated the first reported room-temperature operation of a patterned quantum-dot edge-emitting laser based on this fabrication technique.

Keywords

MOCVD; electron beam lithography; quantum dot lasers; semiconductor epitaxial layers; 20 degC; edge-emitting laser; electron beam lithography; patterned quantum dot lasers; quantum-dot fabrication; room temperature operation; room-temperature operation; selective area epitaxy; selective area metal-organic chemical vapor deposition; Chemical vapor deposition; Electron beams; Electron optics; Epitaxial growth; Gallium arsenide; Lithography; MOCVD; Optical device fabrication; Quantum dot lasers; Quantum dots; Electron beam lithography; metal–organic chemical vapor deposition (MOCVD); patterned quantum dot; quantum-dot laser; selective area epitaxy;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.844555

Filename

1424058