Title :
High-performance single-mode VCSELs in the 1310-nm waveband
Author :
Iakovlev, V. ; Suruceanu, G. ; Caliman, A. ; Mereuta, A. ; Mircea, A. ; Berseth, C.-A. ; Syrbu, A. ; Rudra, A. ; Kapon, E.
Author_Institution :
BeamExpress S.A., Lausanne, Switzerland
fDate :
5/1/2005 12:00:00 AM
Abstract :
High-performance vertical-cavity surface-emitting lasers (VCSELs) emitting in the 1310-nm waveband are fabricated by bonding AlGaAs-GaAs distributed Bragg reflectors on both sides of a InP-based cavity. A 2-in wafer bonding process is optimized to produce very good on-wafer device parameter uniformity. Carrier injection is implemented via double intracavity contact layers and a tunnel junction. A 1.2-mW single-mode output power is obtained in the temperature range of 20°C-80°C. Modulation capability at 3.2 Gb/s is demonstrated up to 70°C. Overall VCSEL performance complies with the requirements of the 10 GBASE-LX4 IEEE.802.3ae standard, which opens the way for novel applications of VCSELs emitting in the 1310-nm band.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optical fibre communication; optical modulation; semiconductor lasers; surface emitting lasers; wafer bonding; 1.2 mW; 1310 nm; 2 in; 20 to 80 degC; 3.2 Gbit/s; AlGaAs-GaAs distributed Bragg reflectors; AlGaAs-GaAs-InP; InP-based cavity; Wafer bonding; carrier injection; double intracavity contact layers; high-performance VCSEL; laser fabrication; on-wafer device parameter; optical modulation; single-mode VCSEL; tunnel junction; vertical cavity surface-emitting lasers; Distributed Bragg reflectors; Etching; Mirrors; Power generation; Surface emitting lasers; Surface waves; Temperature distribution; Vertical cavity surface emitting lasers; Voltage; Wafer bonding; Surface-emitting lasers; wafer bonding;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.845654
