Semiconductor optical amplifier for CWDM operating over 1540-1620 nm

Author

Park, Seoijin ; Leavitt, R. ; Enck, R. ; Luciani, V. ; Hu, Y. ; Heim, P.J.S. ; Bowler, D. ; Dagenais, M.

Author_Institution

Covega Corp., Jessup, MD, USA

Volume

17

Issue

5

fYear

2005

fDate

5/1/2005 12:00:00 AM

Firstpage

980

Lastpage

982

Abstract

A semiconductor optical amplifier was developed for coarse wavelength-division-multiplexing (CWDM) operating over 1540-1620 nm (C-L band). A unique quantum-well structure was designed to meet the requirements for the CWDM operation such as wide bandwidth, low polarization-dependent gain, and high-saturation power at the short wavelength end of the band (1540 nm). Over the band, 24-dB maximum chip gain was obtained with less than 4.3-dB gain flatness and more than 14.6-dBm saturation power.

Keywords

light polarisation; optical saturation; quantum well lasers; semiconductor optical amplifiers; wavelength division multiplexing; 1540 to 1620 nm; 24 dB; CWDM operation; chip gain; coarse wavelength-division-multiplexing; gain flatness; high-bandwidth SOA; high-saturation power; low-polarization-dependent gain; quantum-well structure; semiconductor optical amplifier; Bandwidth; Magnetic confinement; Optical amplifiers; Optical polarization; Optical saturation; Quantum well devices; Quantum wells; Semiconductor optical amplifiers; Tellurium; Wavelength division multiplexing; Quantum-well devices; semiconductor optical amplifiers (SOAs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.845729

Filename

1424073