DocumentCode
784889
Title
Characterisation of GaAs FET and HEMT chips and packages for accurate hybrid circuit design
Author
Bridge, J.P. ; Ladbrooke, P.H. ; Hill, A.J.
Author_Institution
GaAs Code Ltd., St. John´´s Innovation Centre, Cambridge, UK
Volume
139
Issue
4
fYear
1992
fDate
8/1/1992 12:00:00 AM
Firstpage
330
Lastpage
336
Abstract
The paper describes a technique for characterising an FET or an HEMT chip and the enclosing package without the need to separate the two physically. The standard approach of characterising the two parts separately leads to an inaccurate description of the contribution the package makes to the overall electrical characteristics of the packaged device
Keywords
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; packaging; semiconductor device models; FET chips; GaAs; HEMT chip; electrical characteristics; enclosing package; hybrid circuit design; packaged device;
fLanguage
English
Journal_Title
Microwaves, Antennas and Propagation, IEE Proceedings H
Publisher
iet
ISSN
0950-107X
Type
jour
Filename
157047
Link To Document