Title :
Characterisation of GaAs FET and HEMT chips and packages for accurate hybrid circuit design
Author :
Bridge, J.P. ; Ladbrooke, P.H. ; Hill, A.J.
Author_Institution :
GaAs Code Ltd., St. John´´s Innovation Centre, Cambridge, UK
fDate :
8/1/1992 12:00:00 AM
Abstract :
The paper describes a technique for characterising an FET or an HEMT chip and the enclosing package without the need to separate the two physically. The standard approach of characterising the two parts separately leads to an inaccurate description of the contribution the package makes to the overall electrical characteristics of the packaged device
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; packaging; semiconductor device models; FET chips; GaAs; HEMT chip; electrical characteristics; enclosing package; hybrid circuit design; packaged device;
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings H
