Title :
Semiconductor pressure sensor based on FET structure
Author :
Lysko, Jan Marek ; Jachowicz, Ryszard S. ; Krzycki, Marcin Andrzej
Author_Institution :
Inst. of Electron Technol., Warsaw, Poland
fDate :
6/1/1995 12:00:00 AM
Abstract :
A construction of a new silicon pressure sensor based on n-type FET and fabrication of the structure by one-side surface micromachining techniques, are presented. Some mechanoelectric parameters were both tested and simulated with the use of the finite difference method. The sensor integration with the standard field-effect transistor was proposed for temperature compensation
Keywords :
MOS integrated circuits; digital simulation; elemental semiconductors; integrated circuit technology; photolithography; pressure sensors; silicon; FET structure; Si; Si pressure sensor; finite difference method; mechanoelectric parameters; n-type FET; one-side surface micromachining; semiconductor pressure sensor; sensor integration; standard field-effect transistor; temperature compensation; Capacitance measurement; Capacitive sensors; Current measurement; Electrodes; FETs; Fabrication; Sensor phenomena and characterization; Silicon; Substrates; Temperature sensors;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
