A 5.2-GHz CMOS T/R Switch for Ultra-Low-Voltage Operations

A novel CMOS transmit/receive (T/R) switch suitable for ultra-low-voltage operations is presented in this paper. Due to the use of resonators in the receiving and transmitting paths, enhanced performance in terms of insertion losses and isolation can be achieved. In addition, the forward-body-bias and body-floating techniques are also introduced to minimize the on-resistance of the MOSFETs at a reduced bias voltage. Using a standard 0.18-mum CMOS process, a 5.2-GHz asymmetric T/R switch based on the proposed architecture is implemented. With a supply voltage of 0.6 V, the fabricated circuit exhibits 1.56-dB insertion loss, 17-dB isolation, and 11.2-dBm in the receiving mode while the measured results in the transmitting mode are 2.02 dB, 31 dB, and 29.6 dBm, respectively.