DocumentCode :
785116
Title :
Laser ablation deposition of YIG films on semiconductor and amorphous substrates
Author :
Karim, R. ; Oliver, S.A. ; Vittoria, Claude
Author_Institution :
Center for Electromagn. Res., Northeastern Univ., Boston, MA, USA
Volume :
31
Issue :
6
fYear :
1995
fDate :
11/1/1995 12:00:00 AM
Firstpage :
3485
Lastpage :
3487
Abstract :
Yttrium Iron Garnet (YIG) films were grown on single crystal silicon, Corning glass, single crystal MgO and quartz substrates using pulsed laser ablation techniques. Films were grown over a range of temperature, deposition rate, and oxygen partial-pressure conditions. Sample microwave magnetic properties were deduced using ferromagnetic resonance (FMR) measurements, with the sample magnetic properties also being measured. All films were polycrystalline, with as-grown films deposited at temperatures below 800°C having a weak magnetization. Good magnetic and microwave magnetic properties were obtained after annealing the samples in atmosphere at temperatures above 720°C. FMR linewidths of 55 Oe were measured on the annealed films on glass substrates. We believe that growth of thick films with these properties will be sufficient for many polycrystalline-based YIG devices
Keywords :
annealing; ferromagnetic resonance; garnets; magnetic thin films; magnetisation; pulsed laser deposition; yttrium compounds; 720 to 800 C; Corning glass; FMR; FMR linewidths; MgO; Si; SiO2; YFe5O12; YIG; YIG films; amorphous substrates; annealing; deposition rate; ferromagnetic resonance; laser ablation deposition; microwave magnetic properties; oxygen partial-pressure conditions; polycrystalline films; pulsed laser ablation; quartz substrates; semiconductor substrates; single crystal MgO; single crystal Si; weak magnetization; yttrium iron garnet films; Atmospheric measurements; Glass; Laser ablation; Magnetic films; Magnetic properties; Magnetic resonance; Masers; Pulsed laser deposition; Semiconductor films; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.489544
Filename :
489544
Link To Document :
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