Resonance frequency, damping, and differential gain in 1.5 μm multiple quantum-well lasers

Author

Tatham, M.C. ; Lealman, I.F. ; Seltzer, Colin P. ; Westbrook, L.D. ; Cooper, D.M.

Author_Institution

British Telecom Res. Lab., Ipswich, UK

Volume

28

Issue

2

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

408

Lastpage

414

Abstract

A systematic investigation is presented into the intrinsic frequency response of quantum-well lasers, using parasitic-free relative intensity noise (RIN) measurements. There is shown to be a strong dependence of the resonance frequency on the number of quantum wells in the active region, originating from variations both in internal losses and in differential gain. The differential gain is found to have values higher than in corresponding bulk lasers, but only in devices with a large number of wells. The damping is also found to vary in a manner consonant with the changes in differential gain; however, comparison with bulk lasers indicates substantially stronger gain suppression in the quantum-well lasers studied

Keywords

electron device noise; frequency response; infrared sources; optical losses; semiconductor junction lasers; 1.5 micron; IR sources; MQW laser diodes; active region; damping; differential gain; gain suppression; internal losses; intrinsic frequency response; multiple quantum-well lasers; parasitic-free relative intensity noise; quantum well number; resonance frequency; Bandwidth; Damping; Frequency measurement; Frequency response; Laser theory; Noise measurement; Quantum well devices; Quantum well lasers; Resonance; Resonant frequency;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.123267

Filename

123267