• DocumentCode
    785154
  • Title

    Radiation damage factor for ion-implanted silicon detectors irradiated with heavy ions

  • Author

    Kurokawa, M. ; Motobayashi, T. ; Ieki, K. ; Shimoura, S. ; Murakami, H. ; Ikeda, Y. ; Moriya, S. ; Yanagisawa, Y. ; Nomura, T.

  • Author_Institution
    Dept. of Phys., Rikkyo Univ., Tokyo, Japan
  • Volume
    42
  • Issue
    3
  • fYear
    1995
  • fDate
    6/1/1995 12:00:00 AM
  • Firstpage
    163
  • Lastpage
    166
  • Abstract
    Ion-implanted silicon detectors were irradiated with 18-150 MeV 16O, 20 MeV 40Ar, and 53 MeV 110Xe. A linear increase of the leakage current was observed as a function of the particle fluence up to 2.2×108 cm-2. Extracted damage factors are proportional to the averaged nuclear stopping power over five orders of magnitude covering heavy ions studied in the present work and also protons of 25-800 MeV energies
  • Keywords
    ion beam effects; silicon radiation detectors; 110Xe irradiation; 16O irradiation; 40Ar irradiation; averaged nuclear stopping power; heavy ion irradiation; ion-implanted Si detectors; leakage current; particle fluence; protons; radiation damage factor; Argon; Current measurement; Electrons; Energy loss; Energy measurement; Helium; Leakage current; Protons; Radiation detectors; Silicon radiation detectors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.387356
  • Filename
    387356
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=785154