Title :
Low-threshold (3.2 mA per element) 1.3 mu m InGaAsP MQW laser array on a p-type substrate
Author :
Yamashita, S. ; Oka, A. ; Kawano, T. ; Tsuchiya, T. ; Saitoh, K. ; Uomi, K. ; Ono, Y.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
A low-threshold 1.3- mu m InGaAsP MQW laser array was fabricated on a p-type InP substrate taking compatibility with n/p/n-type laser-driver circuits into account. The laser has a p/n-type current-blocking structure and is made entirely by metal-organic chemical vapor deposition (MOCVD). A 10-channel laser array with a threshold current as low as 3.2+or-0.2 mA (per element) and a slope efficiency of 0.27+or-0.01 W/A is obtained.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical workshop techniques; semiconductor growth; semiconductor laser arrays; vapour phase epitaxial growth; 1.3 micron; 10-channel laser array; 3.2 mA; IR; InGaAsP; InP; MOCVD; MQW laser array; compatibility; low-threshold; metal-organic chemical vapor deposition; n/p/n-type laser-driver circuits; p-type InP substrate; p-type substrate; p/n-type current-blocking structure; semiconductors; slope efficiency; threshold current; Chemical lasers; Chemical vapor deposition; Circuits; Indium phosphide; MOCVD; Optical arrays; Optical signal processing; Quantum well devices; Substrates; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
