Phase-amplitude coupling factor of single-mode gain-switched InGaAsP laser diodes

Author

Bouchoule, S. ; Stelmakh, N. ; Lourtioz, J.-M. ; Cavelier, M. ; Kazmierski, C.

Author_Institution

Inst. d´´Electron. Fondamentale, Paris Univ., Orsay, France

Volume

4

Issue

9

fYear

1992

Firstpage

979

Lastpage

982

Abstract

The phase amplitude coupling factor ( alpha -factor) of gain-switched InGaAsP laser diodes is deduced from chirp measurements. A tunable laser scheme makes it possible to obtain the wavelength dependence of alpha over approximately 40 nm. The alpha -values are found to be higher than those deduced from spontaneous emission spectra below threshold. It is shown that the difference is explained by the dependence of alpha with carrier density. Time-resolved measurements of spontaneous emission during pulse buildup reveal that the carrier density at maximum can be 1.5 times higher than the threshold carrier density. Experimental evolutions of alpha are well reproduced by calculations.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; laser modes; optical switches; semiconductor lasers; semiconductor switches; superradiance; InGaAsP laser diodes; alpha -factor; amplified spontaneous emission; below threshold; carrier density; chirp measurements; gain-switched; phase amplitude coupling factor; pulse buildup; semiconductors; single-mode; spontaneous emission spectra; threshold carrier density; time-resolved measurements; tunable laser; wavelength dependence; Charge carrier density; Chirp; Diode lasers; Gain measurement; Optical coupling; Phase measurement; Pulse measurements; Spontaneous emission; Tunable circuits and devices; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.157121

Filename

157121