Title :
A field-effect GaAs laser diode with controlled carrier distribution in central and satellite valleys
Author :
Sutkus, Kestutis ; Shum, Kai ; Alfano, R.R.
Author_Institution :
City Univ. of New York, NY, USA
Abstract :
The transient behavior of a field-effect GaAs laser diode is modeled under a controlled carrier distribution in the central ( Gamma ) and satellite (S) valleys. The carrier distribution control is achieved by modulating the applied electric field which heats carriers to energies higher than 0.38 eV for Gamma to S scatterings. The numerical analysis of the rate equations shows that picosecond optical pulses can be produced.<>
Keywords :
III-V semiconductors; field effect devices; gallium arsenide; laser theory; semiconductor device models; semiconductor lasers; 0.38 eV; GaAs; applied electric field; carrier distribution control; carrier heating; central valleys; controlled carrier distribution; electric field modulation; field-effect GaAs laser diode; numerical analysis; picosecond optical pulses; rate equations; satellite valleys; semiconductors; transient behavior; Centralized control; Diode lasers; Equations; Gallium arsenide; Numerical analysis; Optical control; Optical scattering; Resistance heating; Satellites; Temperature control;
Journal_Title :
Photonics Technology Letters, IEEE
