• DocumentCode
    78534
  • Title

    Trench SOI LDMOS with vertical field plate

  • Author

    Lijuan Wu ; Wentong Zhang ; Qin Shi ; Pengfei Cai ; Hangcheng He

  • Author_Institution
    Sch. of Phys. & Electron. Sci., Changsha Univ. of Sci. & Technol., Changsha, China
  • Volume
    50
  • Issue
    25
  • fYear
    2014
  • fDate
    12 4 2014
  • Firstpage
    1982
  • Lastpage
    1984
  • Abstract
    A novel vertical field plate (VFP) structure with low specific on-resistance (Ron,sp) is proposed. The VFP is inserted in the field oxide of the drift region with heavily doped N pillar parallel to the trench oxide layer (TOL), which depletes fully the drift region to decrease Ron,sp effectively and enhances the bulk field (ENBULF). The VFP optimises the bulk electric field to increase the breakdown voltage (BV). The BV of VFP is 668 V with an Ron,sp of 44.7 mΩ cm2, which is much lower than the silicon limit.
  • Keywords
    MOSFET; electric breakdown; elemental semiconductors; silicon; silicon-on-insulator; ENBULF; Si; TOL; VFP structure; breakdown voltage; bulk electric field; drift region; enhanced bulk field; field oxide; heavily- doped N pillar; silicon limit; specific on-resistance; trench SOI LDMOS; trench oxide layer; vertical field plate structure; voltage 668 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2014.3443
  • Filename
    6975759
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=78534