Title :
Trench SOI LDMOS with vertical field plate
Author :
Lijuan Wu ; Wentong Zhang ; Qin Shi ; Pengfei Cai ; Hangcheng He
Author_Institution :
Sch. of Phys. & Electron. Sci., Changsha Univ. of Sci. & Technol., Changsha, China
Abstract :
A novel vertical field plate (VFP) structure with low specific on-resistance (Ron,sp) is proposed. The VFP is inserted in the field oxide of the drift region with heavily doped N pillar parallel to the trench oxide layer (TOL), which depletes fully the drift region to decrease Ron,sp effectively and enhances the bulk field (ENBULF). The VFP optimises the bulk electric field to increase the breakdown voltage (BV). The BV of VFP is 668 V with an Ron,sp of 44.7 mΩ cm2, which is much lower than the silicon limit.
Keywords :
MOSFET; electric breakdown; elemental semiconductors; silicon; silicon-on-insulator; ENBULF; Si; TOL; VFP structure; breakdown voltage; bulk electric field; drift region; enhanced bulk field; field oxide; heavily- doped N pillar; silicon limit; specific on-resistance; trench SOI LDMOS; trench oxide layer; vertical field plate structure; voltage 668 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.3443
