Title :
Vertical electrical interconnection of compound semiconductor thin-film devices to underlying silicon circuitry
Author :
Camperi-Ginestet, C. ; Kim, Y.W. ; Jokerst, N.M. ; Allen, M.G. ; Brooke, M.A.
Author_Institution :
Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
A three-dimensional integration technology that electrically connects an independently optimized thin-film device layer to a Si circuitry layer is reported. An epitaxial liftoff GaAs thin-film optical detector is integrated directly on top of Si amplifier circuitry with a planarizing, insulating layer of polymide between the detector and the circuitry. The detector is virtually connected to the circuitry below through an electrical via in the insulator. This integration technology enables monolithic, massively parallel vertical interconnection between two independently optimized device layers. Systems such as image processing arrays should significantly benefit from this massively parallel integration technology.<>
Keywords :
integrated optoelectronics; optical films; optical interconnections; photodetectors; 3D vertical electrical interconnection; GaAs; Si amplifier circuitry; Si circuitry; compound semiconductor thin-film devices; electrical via; electrically connects; epitaxial liftoff; image processing arrays; independently optimized device layers; independently optimized thin-film device layer; insulating layer; insulator; integration technology; massively parallel vertical interconnection; monolithic interconnections; parallel architectures; planarizing; polymide; thin-film optical detector; Gallium arsenide; Integrated circuit interconnections; Integrated circuit technology; Optical amplifiers; Optical detectors; Optical films; Semiconductor optical amplifiers; Semiconductor thin films; Thin film circuits; Thin film devices;
Journal_Title :
Photonics Technology Letters, IEEE
