Title :
High-speed optical response of pseudomorphic InGaAs high electron mobility transistors
Author :
Martin, M.Z. ; Oshita, F.K. ; Matloubian, M. ; Fetterman, H.R. ; Shaw, L. ; Tan, K.L.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
The optical responses of very high-frequency pseudomorphic InGaAs HEMTs with f/sub T/ of 140 GHz were obtained. These measurements were done using the picosecond time domain optoelectronic technique at room and low temperatures. The optical photovoltaic responses of these HEMTs show FWHM values of 8.4 and 7.5 ps at room temperature and 20 K, respectively. Photoconductive responsivity as high as 4 A/W with an external quantum efficiency of >600% is reported.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; high-speed optical techniques; indium compounds; integrated optoelectronics; optical switches; photoconducting devices; photovoltaic effects; 140 GHz; 20 K; 600 percent; 7.5 ps; 8.4 ps; HEMTs; InGaAs; external quantum efficiency; high-frequency; low temperatures; optical photovoltaic responses; optical responses; photoconductive responsivity; photoconductive switches; picosecond time domain optoelectronic technique; pseudomorphic InGaAs high electron mobility transistors; room temperature; semiconductors; Electron optics; HEMTs; High speed optical techniques; Indium gallium arsenide; MODFETs; Photoconductivity; Photovoltaic systems; Solar power generation; Temperature; Time measurement;
Journal_Title :
Photonics Technology Letters, IEEE
