High-speed optical response of pseudomorphic InGaAs high electron mobility transistors

Author

Martin, M.Z. ; Oshita, F.K. ; Matloubian, M. ; Fetterman, H.R. ; Shaw, L. ; Tan, K.L.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

4

Issue

9

fYear

1992

Firstpage

1012

Lastpage

1014

Abstract

The optical responses of very high-frequency pseudomorphic InGaAs HEMTs with f/sub T/ of 140 GHz were obtained. These measurements were done using the picosecond time domain optoelectronic technique at room and low temperatures. The optical photovoltaic responses of these HEMTs show FWHM values of 8.4 and 7.5 ps at room temperature and 20 K, respectively. Photoconductive responsivity as high as 4 A/W with an external quantum efficiency of >600% is reported.<>

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; high-speed optical techniques; indium compounds; integrated optoelectronics; optical switches; photoconducting devices; photovoltaic effects; 140 GHz; 20 K; 600 percent; 7.5 ps; 8.4 ps; HEMTs; InGaAs; external quantum efficiency; high-frequency; low temperatures; optical photovoltaic responses; optical responses; photoconductive responsivity; photoconductive switches; picosecond time domain optoelectronic technique; pseudomorphic InGaAs high electron mobility transistors; room temperature; semiconductors; Electron optics; HEMTs; High speed optical techniques; Indium gallium arsenide; MODFETs; Photoconductivity; Photovoltaic systems; Solar power generation; Temperature; Time measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.157132

Filename

157132