Title :
Transit-time broad-banding of very high bandwidth monolithic p-i-n/HBT optical receivers
Author :
Govindarajan, M. ; Forrest, S.R.
Author_Institution :
Univ. of Southern California, Los Angeles, CA, USA
Abstract :
The authors show that phase shifts due to electron transit-times in the collector regions of heterojunction bipolar monolithic optical receivers lead to a widebanding of the frequency response or, at worst, circuit instability. Simple quantitative expressions are derived in order to analyze this effect. The dependence of widebanding on the open-loop transistor bias conditions is discussed.<>
Keywords :
bipolar integrated circuits; frequency response; integrated optoelectronics; p-i-n diodes; photodiodes; receivers; HBT optical receivers; broad-banding; circuit instability; electron transit-times; frequency response; heterojunction bipolar monolithic optical receivers; monolithic integrated circuits; open-loop transistor bias conditions; p-i-n photodiodes; phase shifts; very high bandwidth; widebanding; Bandwidth; Bipolar transistors; Circuits; Detectors; Frequency dependence; Frequency response; Heterojunction bipolar transistors; Optical receivers; PIN photodiodes; Photodetectors;
Journal_Title :
Photonics Technology Letters, IEEE
