DocumentCode
785866
Title
Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors
Author
Yee, M. ; Ng, W.K. ; David, J.P.R. ; Houston, P.A. ; Tan, C.H. ; Krysa, A.
Author_Institution
Adv. Technol. Group, TECH Semicond., Singapore, Singapore
Volume
50
Issue
10
fYear
2003
Firstpage
2021
Lastpage
2026
Abstract
The avalanche multiplication and impact ionization coefficients in In0.53Ga0.47As p-i-n and n-i-p diodes over a range of temperature from 20-400 K were measured and shown to have negative temperature dependence. This is contrary to the positive temperature dependence of the breakdown voltage measured on InP/In0.53Ga0.47As heterojunction bipolar transistors (HBTs) in this and previous works. It is shown that the collector-base dark current and current gain can be the overriding influence on the temperature dependence of breakdown in InP/In0.53Ga0.47As HBTs and could explain previous anomalous interpretations from the latter.
Keywords
III-V semiconductors; avalanche breakdown; gallium arsenide; heterojunction bipolar transistors; impact ionisation; indium compounds; p-i-n diodes; semiconductor device breakdown; 20 to 400 K; In0.53Ga0.47As; InP-In0.53Ga0.47As; avalanche multiplication; breakdown voltage; current gain; dark current; heterojunction bipolar transistor; impact ionization; n-i-p diode; p-i-n diode; temperature dependence; Avalanche breakdown; Breakdown voltage; Heterojunction bipolar transistors; Impact ionization; Indium phosphide; P-i-n diodes; PIN photodiodes; Temperature dependence; Temperature distribution; Voltage measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2003.816553
Filename
1232919
Link To Document