Title :
High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management
Author :
Yan, Bei-Ping ; Yang, Yue-Fei ; Yue-Fei Yang ; Wang, Xiao-Qin ; Hsu, Chung-Chi
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, China
Abstract :
High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors (HEBTs) have been demonstrated. The large signal performance of the HEBTs is characterized. Output power of 0.25 W with power added efficiency (PAE) of 63.5% at 1.9 GHz has been achieved from a 26-finger HEBT with total emitter area of 873.6 μm2. Output power of 1.0 W with PAE of 63% has been obtained from the composition of four above-mentioned power cells at the optimum conditions of impedance matching. The thermal performance of HEBT is presented and the results show better thermal management than conventional HBT. The experimental results demonstrate good power performance and capability of HEBTs.
Keywords :
III-V semiconductors; UHF bipolar transistors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; impedance matching; indium compounds; power bipolar transistors; 0.25 W; 1.0 W; 1.9 GHz; 63 percent; 63.5 percent; InGaP-GaAs; InGaP/GaAs; impedance matching; large signal performance; offset voltage; output power; power added efficiency; power cells; power heterostructure-emitter bipolar transistors; thermal management; total emitter area; Bipolar transistors; Energy management; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; Low voltage; Performance gain; Power generation; Temperature dependence; Thermal management;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.816551
