Title :
Improvement of AlGaInP light emitting diode by sulfide passivation
Author :
Su, Y.K. ; Wang, H.C. ; Lin, C.L. ; Chen, W.B. ; Chen, S.M.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Taman, Taiwan
Abstract :
The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; brightness; gallium compounds; indium compounds; leakage currents; light emitting diodes; passivation; rough surfaces; 2 V; 20 mA; AlGaInP; AlGaInP light emitting diode; Fresnel loss reduction; LED; brightness; effective carrier injection; leakage current; sulfide passivation; sulfide treatment; surface roughness; Brightness; Leakage current; Light emitting diodes; Passivation; Rough surfaces; Semiconductor diodes; Semiconductor impurities; Surface emitting lasers; Surface roughness; Surface treatment;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.818064
