Title :
InGaAs-AlAs-AlAsSb coupled quantum well intersubband transition all-optical switch with low switching energy for OTDM systems
Author :
Simoyama, T. ; Yoshida, Hiroyuki ; Jun-ichi Kasai ; Mozume, T. ; Gopal, A.V. ; Ishikawa, Hiroshi
Author_Institution :
Femtosecond Technol. Res. Assoc., Tsukuba, Japan
Abstract :
We report a novel intersubband transition all-optical switch with low switching energy using InGaAs-AlAs-AlAsSb coupled double quantum wells (C-DQWs) with AlAs spacer layers. Very low saturation energy density of 34 fJ/μm2 was observed for bulk transmittance with wavelength of 1.62 μm. Using a waveguide, whose core is 93 periods of the C-DQWs, an all optical switch with a low switching energy of 10 pJ for 10-dB extinction ratio was realized.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; optical saturable absorption; optical switches; optical waveguides; quantum well devices; semiconductor quantum wells; semiconductor switches; time division multiplexing; 1.62 micron; 10 pJ; 10-dB extinction ratio; AlAs spacer layers; InGaAs-AlAs-AlAsSb; InGaAs-AlAs-AlAsSb coupled double quantum wells; InGaAs-AlAs-AlAsSb coupled quantum well intersubband transition all-optical switch; OTDM systems; absorption saturation; bulk transmittance; low switching energy; optical-time division multiplexing; very low saturation energy density; waveguide structure; Absorption; Communication switching; Infrared detectors; Optical saturation; Optical switches; Optical waveguides; Optical wavelength conversion; Ultrafast optics; Venus; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2003.818045
