• DocumentCode
    786432
  • Title

    A 2.5-V 45-Gb/s decision circuit using SiGe BiCMOS logic

  • Author

    Dickson, Timothy O. ; Beerkens, Rudy ; Voinigescu, Sorin P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Toronto, Ont., Canada
  • Volume
    40
  • Issue
    4
  • fYear
    2005
  • fDate
    4/1/2005 12:00:00 AM
  • Firstpage
    994
  • Lastpage
    1003
  • Abstract
    A 45-Gb/s BiCMOS decision circuit operating from a 2.5-V supply is reported. The full-rate retiming flip-flop operates from the lowest supply voltage of any silicon-based flip-flop demonstrated to date at this speed. MOS and SiGe heterojunction-bipolar-transistor (HBT) current-mode logic families are compared. Capitalizing on the best features of both families, a true BiCMOS logic topology is presented that allows for operation from lower supply voltages than pure HBT implementations without compromising speed. The topology, based on a BiCMOS cascode, can also be applied to a number of millimeter-wave (mm-wave) circuits. In addition to the retiming flip-flop, the decision circuit includes a broadband transimpedance preamplifier to improve sensitivity, a tuned 45-GHz clock buffer, and a 50-Ω output driver. The first mm-wave transformer is employed along the clock path to perform single-ended-to-differential conversion. The entire circuit, which is implemented in a production 130-nm BiCMOS process with 150-GHz fT SiGe HBT, consumes 288 mW from a 2.5-V supply, including only 58 mW from the flip-flop.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MMIC; current-mode logic; flip-flops; heterojunction bipolar transistors; low-power electronics; 130 nm; 150 GHz; 2.5 V; 288 mW; 45 GHz; 45 Gbit/s; 58 mW; BiCMOS decision circuit; BiCMOS logic topology; SiGe; clock buffer; current-mode logic; flip-flop; heterojunction bipolar transistor; low supply voltages; millimeterwave circuits; mm-wave transformer; transimpedance amplifier; BiCMOS integrated circuits; Circuit topology; Clocks; Flip-flops; Germanium silicon alloys; Heterojunction bipolar transistors; Logic circuits; Millimeter wave circuits; Silicon germanium; Voltage; BiCMOS; SiGe HBT; current-mode logic; flip-flops; low-noise; millimeter-wave (mm-wave); transformer; transimpedance amplifier;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2004.842828
  • Filename
    1424232