Title :
Radiation Damage in Lithium Doped Silicon
Author :
Carter, J.R., Jr.
Author_Institution :
TRW Systems Bldg. Rl, Rm. 2006 One Space Park Redondo Beach, California 90278
Abstract :
Majority carrier removal rates for electron irradiation were studied in lithium doped float zone silicon. The removal appears to be due to reaction of lithium donors with displacement products to form uncharged complexes. A time dependent removal was observed after termination of the radiation. An exponential removal of carriers with electron fluence was also observed.
Keywords :
Annealing; Atomic measurements; Diodes; Electrons; Impurities; Lithium; Photovoltaic cells; Silicon devices; Spontaneous emission; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1967.4324782
