The Analysis of Radiation Effects in Semiconductor Junction Devices

A computer program has been written for the prediction of transient and permanent radiation damage in junction devices. This program calculates the transient solutions of Poisson´s equation and the continuity equations throughout a one-dimensional structure. Mobility, lifetime, and carrier generation are described by nonlinear functions of carrier density and current so that scatter-limiting velocity, Shockley-Read-Hall recombination, and avalanche ionization phenomena are described. Three examples are presented which illustrate the utility of such programs in predicting both ionization and displacement damage effects in a PIN diode and a bipolar transistor.