• DocumentCode
    786652
  • Title

    Quantum well infra-red photodetector response controlled by very low power visible source

  • Author

    Berger, V. ; Vodjdani, N.

  • Author_Institution
    Lab. Central de Recherches, Thomson CSF, Orsay, France
  • Volume
    28
  • Issue
    21
  • fYear
    1992
  • Firstpage
    1980
  • Lastpage
    1981
  • Abstract
    An optically controlled quantum well infra-red photodetector is presented. The visible illumination changes the bias across the resistor-biased multiquantum well diode, and hence changes its photoresponse. The responsivity of the detector is controlled over several orders of magnitude with only a few milliwatts of control beam power.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; photodetectors; semiconductor quantum wells; Ga 0.6Al 0.4As barrier; Ga 0.8Al 0.2As-GaAs; GaAs substrate; optical control; photoresponse; quantum well IR photodetector; resistor-biased multiquantum well diode; very low power visible source; visible illumination;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921269
  • Filename
    170873
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=786652