Some Aspects on the Theory of Transient Radiation Induced Diffusion Currents in Semiconductor Diodes

Analytical expressions for the shape of the diffusion component of the current pulses from a reverse biased semiconductor diode irradiated by short bursts of x-rays are derived, taking into account the physical dimensions and the effect of back diffusion of charge carriers into the bulk regions from the depletion zone. By the model used it seems to be possible to explain the experimentally observed variations of both the amplitude and the decay of the diffusion component with the reverse voltage.