DocumentCode
786724
Title
Modulation bandwidth enhancement in single quantum well GaAs/AlGaAs lasers
Author
Chen, Tiffani R. ; Zhao, Bin ; Yamada, Y. ; Zhuang, Y.H. ; Yariv, Amnon
Author_Institution
California Inst. of Technol., Pasadena, CA, USA
Volume
28
Issue
21
fYear
1992
Firstpage
1989
Lastpage
1991
Abstract
The state filling effect in semiconductor quantum well lasers significantly affects the modulation dynamics. The state filling effect strongly depends on the optical confining layer structure. As a direct consequence of the reduction of the state filling effect in a properly designed graded index separate confinement heterostructure, a record 3 dB bandwidth in excess of 9 GHz has been obtained in uniformly pumped single quantum well GaAs/AlGaAs lasers by a careful tailoring of the vice parameters.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; optical modulation; semiconductor lasers; 9 GHz; GRINSCH; graded index separate confinement heterostructure; modulation bandwidth enhancement; modulation dynamics; optical confining layer structure; semiconductor quantum well lasers; single quantum well GaAs-AlGaAs lasers; state filling effect;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921275
Filename
170879
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